Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

Abstract

We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_{\parallel }$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at $I\perp B_{\parallel }$ into the one measured at $I\parallel B_{\parallel }$ is suggested and is shown to yield results that agree with the experiment.

arXiv commentAs published

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Cited by in corpus (13)

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• Two-dimensional system of strongly interacting electrons in silicon (100) structures
• Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
• Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
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• Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
• Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
• Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
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• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems
• Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system
• Spin and valley effects on the quantum phase transition in two dimensions
• Quantum Wigner solid in two-dimensional electron systems in semiconductors