Spin polarization and exchange-correlation effects in transport properties of two-dimensional electron systems in silicon
arXiv:1704.01519 · doi:10.1103/PhysRevB.96.075307
Abstract
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the transition occurs when electron spins are only partially polarized, additional increase in the magnetic field is necessary to achieve the full spin polarization in the insulating state due to the exchange effects.
As published
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Cited by in corpus (11)
- Recent developments in the field of the metal-insulator transition in two dimensions
- Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
- Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers
- Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system
- Two-dimensional system of strongly interacting electrons in silicon (100) structures
- Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
- Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si
- Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
- Neutron stars with spin polarized self-interacting dark matter
- Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
- Spin and valley effects on the quantum phase transition in two dimensions