Localized - delocalized electron quantum phase transitions

Abstract

Metal--insulator transitions and transitions between different quantum Hall liquids are used to describe the physical ideas forming the basis of quantum phase transitions and the methods of application of theoretical results in processing experimental data. The following two theoretical schemes are discussed and compared: the general theory of quantum phase transitions, which has been developed according to the theory of thermodynamic phase transitions and relies on the concept of a partition function, and a theory which is based on a scaling hypothesis and the renormalization-group concept borrowed from quantum electrodynamics, with the results formulated in terms of flow diagrams.

27 pages, 20 figures

References in corpus (9)

• Continuous Quantum Phase Transitions
• Quantum phase transitions
• Possible Metal/Insulator Transition at B=0 in Two Dimensions
• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• Scaling theory of two-dimensional metal-insulator transitions
• Comment to "Observation of the neutron radiative decay" by R.U. Khafizov et al., published in JETP Letters 83 (2006) 5 (Pis'ma v ZhETF 83 (2006) 7)
• Flow diagram of the metal-insulator transition in two dimensions
• Absence of Scaling in the Integer Quantum Hall Effect
• Scaling analysis of the magnetic-field-tuned quantum transition in superconducting amorphous In-O films

Cited by in corpus (8)

• Coherent quantum phase slip
• Generalized dynamical mean-field theory in physics of strongly correlated systems
• Interaction-induced metallicity in a two-dimensional disordered non-Fermi liquid
• Crossover from impurity-controlled to granular superconductivity in (TMTSF)2ClO4
• Spin polarization and exchange-correlation effects in transport properties of two-dimensional electron systems in silicon
• Two-dimensional system of strongly interacting electrons in silicon (100) structures
• Polarization field in a single-valley strongly-interacting 2D electron system
• Memory effect in the charge transport in strongly disordered antimony films