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cond-mat.mes-hall2004
Numerical evaluation of the dipole-scattering model for the metal-insulator transition in gated high mobility Silicon inversion layers
T. Hörmann, G. Brunthaler
The dipole trap model is able to explain the main properties of the apparent metal-to-insulator transition in gated high mobility Si-inversion layers. Our numerical calculations ar…
cond-mat.str-el2004
Reply to Comment (cond-mat/0311174)
V. M. Pudalov, M. E. Gershenson, H. Kojima +2
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densit…