216 citations · 533 across the 14 of their papers we have counts for
Showing 1999Show all
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cond-mat.mes-hall1999
Weak localization in the 2D metallic regime of Si-MOS
G. Brunthaler, A. Prinz, G. Bauer +5
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^…
cond-mat.str-el1999
Time-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport
V. M. Pudalov, G. Brunthaler, A. Prinz +2
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the cr…
cond-mat.str-el1999★ 16 cited
Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures
V. M. Pudalov, G. Brunthaler, A. Prinz +1
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical…