Interface Contributions to the Spin-Orbit Interaction Parameters of Electrons at the (001) GaAs/AlGaAs Interface
arXiv:1410.2519 · doi:10.1134/S0021364014140033
Abstract
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/AlGaAs quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to compensate (enhance) considerably the contribution of the bulk Dresselhaus (Bychkov-Rashba) mechanism. The theoretical approach is based on the solution of the effective mass equation in a quasitriangular well supplemented by a new boundary condition at a high and atomically sharp heterobarrier. The model takes into account the spin-orbit interaction of electrons with both bulk and interfacial crystal potential having C symmetry, as well as the lack of inversion symmetry and nonparabolicity of the conduction band in GaAs. The effective 2D spin Hamiltonian including both bulk and interfacial contributions to the Dresselhaus () and Rashba () constants has been derived. The analytical relation between these constants and the components of the anisotropic nonlinear -factor tensor in an oblique quantizing magnetic field has been found. The experimental approach is based, on one hand, on the detection of electron spin resonance in the microwave range and, on the other hand, on photoluminescence measurements of the nonparabolicity parameter. The interfacial contributions to and have been found from comparison with the theory.
7 pages, 3 figures, 2 tables
References in corpus (9)
- Emergence of the persistent spin helix in semiconductor quantum wells
- Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
- Cubic Dresselhaus Spin-Orbit Coupling in 2D Electron Quantum Dots
- Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
- Spin-orbit fields in asymmetric (001) quantum wells
- Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas
- First-principles envelope-function theory for lattice-matched semiconductor heterostructures
- Spin splitting of two dimensional states in the conduction band of asymmetric heterostructures: contribution from the atomically sharp interface
- Spin-orbit interaction in three-dimensionally bounded semiconductor nanostructures
Cited by in corpus (4)
- Boundary Conditions and Surface States Spectra in Topological Insulators
- Surface States of a System of Dirac Fermions: A Minimal Model
- Edge states and spin-valley edge photocurrent in transition metal dichalcogenide monolayers
- Spin splitting in low-symmetry quantum wells beyond Rashba and Dresselhaus terms