55 citations · 158 across the 11 of their papers we have counts for
11 papers
The Magic Scroll: Leveraging biased noise to improve magic state cultivation in register-based architectures
Ian D. Thorvaldson, Jeffrey Marshall, Jack R. Craig +3
Multiple quantum computing platforms across neutral atoms [1], nitrogen vacancy centres [2, 3], gate-defined dots [4-6] and 14|15 phosphorus atom qubits [7, 8] in silicon are exper…
An 11-qubit atom processor in silicon
Hermann Edlbauer, Junliang Wang, A. M. Saffat-Ee Huq +12
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms withi…
Noise Correlations in a 1D Silicon Spin Qubit Array
M. B. Donnelly, J. Rowlands, L. Kranz +9
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors.…
Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
Radha Krishnan, Beng Yee Gan, Yu-Ling Hsueh +6
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on…
Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
Ian Thorvaldson, Dean Poulos, Christian M. Moehle +15
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit…
Impact of measurement backaction on nuclear spin qubits in silicon
S. Monir, E. N. Osika, S. K. Gorman +7
Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be…
Superexchange coupling of donor qubits in silicon
Mushita M. Munia, Serajum Monir, Edyta N. Osika +2
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of indiv…
Valley interference and spin exchange at the atomic scale in silicon
B. Voisin, J. Bocquel, A. Tankasala +6
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…
Mapping the Chemical Potential Landscape of a Triple Quantum Dot
M. A. Broome, S. K. Gorman, J. G. Keizer +4
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling path…
Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
Muhammad Usman, Juanita Bocquel, Joe Salfi +6
The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…
Single-charge detection by an atomic precision tunnel junction
M. G. House, E. Peretz, J. G. Keizer +2
We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus doping profile in silicon…