32 citations · 61 across the 4 of their papers we have counts for
4 papers
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
A singlet-triplet hole-spin qubit in MOS silicon
S. D. Liles, D. J. Halverson, Z. Wang +14
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics…
Probing Fermi surface parity with spin resolved transverse magnetic focussing
M. J. Rendell, S. D. Liles, S. Bladwell +6
Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi su…
Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
Abhikbrata Sarkar, Zhanning Wang, Mathew Rendell +9
In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit p…