Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

Abstract

In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio $T_1/T_{\pi }$, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as $5\times 10^5$ at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane $g$-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge.

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• A singlet-triplet hole-spin qubit in MOS silicon
• High-fidelity spin qubit shuttling via large spin-orbit interaction
• Geometry of the dephasing sweet spots of spin-orbit qubits
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• Modelling of planar germanium hole qubits in electric and magnetic fields
• Molecular beam epitaxy growth of superconducting tantalum germanide
• Toward Axion Signal Extraction in Semiconductor Spin Qubits Via Spectral Engineering
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Photodriven germanium hole qubit
• Hole spin splitting in a Ge quantum dot with finite barriers
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Role of anisotropic confining potential and elliptical driving in dynamics of a Ge hole qubit
• Spin qubit shuttling between coupled quantum dots with inhomogeneous Landé g-tensors