58 citations · 129 across the 5 of their papers we have counts for
5 papers
Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
Ik Kyeong Jin, Krittika Kumar, Matthew J. Rendell +7
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, chal…
Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing
M. J. Rendell, S. D. Liles, A. Srinivasan +4
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing…
Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing
M. J. Rendell, S. D. Liles, A. Srinivasan +4
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focus…
Lightly-strained germanium quantum wells with hole mobility exceeding one million
M. Lodari, O. Kong, M. Rendell +5
We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…
Electrical control of the -tensor of a single hole in a silicon MOS quantum dot
S. D. Liles, F. Martins, D. S. Miserev +11
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the -factor of holes. However, the un…