58 citations · 126 across the 11 of their papers we have counts for
12 papers
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Anisotropic spin-blockade leakage current in a Ge hole double quantum dot
Zhanning Wang, S. D. Liles, Joe Hillier +2
Group IV quantum dot hole spin systems, exhibiting strong spin-orbit coupling, provide platforms for various qubit architectures. The rapid advancement of solid-state technologies…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles +9
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. U…
A singlet-triplet hole-spin qubit in MOS silicon
S. D. Liles, D. J. Halverson, Z. Wang +14
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics…
Probing Fermi surface parity with spin resolved transverse magnetic focussing
M. J. Rendell, S. D. Liles, S. Bladwell +6
Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi su…
Electrical operation of hole spin qubits in planar MOS silicon quantum dots
Zhanning Wang, Abhikbrata Sarkar, S. D. Liles +4
Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qu…
Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
Ik Kyeong Jin, Krittika Kumar, Matthew J. Rendell +7
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, chal…
Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing
M. J. Rendell, S. D. Liles, A. Srinivasan +4
In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing…
Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing
M. J. Rendell, S. D. Liles, A. Srinivasan +4
Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focus…
Electrical control of the -tensor of a single hole in a silicon MOS quantum dot
S. D. Liles, F. Martins, D. S. Miserev +11
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the -factor of holes. However, the un…