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researcher

S. D. Liles

12 papers hereh-index 6136 citations14 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author9
  • last author1

Across the 12 of 12 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall12
same name
  • S. D. Liles — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20202026
most citedElectrical control of the g-tensor of a single hole in a silicon MOS quantum dot

58 citations · 126 across the 11 of their papers we have counts for

collaborators
Showing 2025Show all

3 papers · 1 filter

cond-mat.mes-hall2025

Precision high-speed quantum logic with holes on a natural silicon foundry platform

Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15

Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…

cond-mat.mes-hall2025

Anisotropic spin-blockade leakage current in a Ge hole double quantum dot

Zhanning Wang, S. D. Liles, Joe Hillier +2

Group IV quantum dot hole spin systems, exhibiting strong spin-orbit coupling, provide platforms for various qubit architectures. The rapid advancement of solid-state technologies…

cond-mat.mes-hall2025★ 1 cited

Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

J. P. Wendoloski, J. Hillier, S. D. Liles +17

The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.