28 citations · 28 across the 3 of their papers we have counts for
4 papers
Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation
Aaquib Shamim, Scott D. Liles, Joe Hillier +10
Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and…
Precision high-speed quantum logic with holes on a natural silicon foundry platform
Isaac Vorreiter, Jonathan Y. Huang, Scott D. Liles +15
Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins…
Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles +9
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. U…
A singlet-triplet hole-spin qubit in MOS silicon
S. D. Liles, D. J. Halverson, Z. Wang +14
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics…