activity
20132024
most citedMechanical spin control of nitrogen-vacancy centers in diamond

249 citations · 806 across the 19 of their papers we have counts for

collaborators

19 papers

cond-mat.mes-hall2024★ 1 cited

Bootstrapping, autonomous testing, and initialization system for Si/SiGe multi-quantum-dot devices

Tyler J. Kovach, Daniel Schug, M. A. Wolfe +7

Semiconductor quantum dot (QD) devices have become central to advancements in spin-based quantum computing. However, the increasing complexity of modern QD devices makes calibratio…

cond-mat.mes-hall2023★ 3 cited

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Collin C. D. Frink, Talise Oh, E. S. Joseph +5

Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…

physics.soc-ph2022★ 100 cited

The emerging commercial landscape of quantum computing

Evan R. MacQuarrie, Christoph Simon, Stephanie Simmons +1

Quantum computing technologies are advancing, and the class of addressable problems is expanding. Together with the emergence of new ventures and government-sponsored partnerships,…

cond-mat.mes-hall2021★ 46 cited

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Thomas McJunkin, E. R. MacQuarrie, Leah Tom +11

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity…

quant-ph2021

Optical observation of single spins in silicon

A. T. K. Kurkjian, D. B. Higginbottom, C. Chartrand +18

The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter i…

quant-ph2021★ 1 cited

T centres in photonic silicon-on-insulator material

E. R. MacQuarrie, C. Chartrand, D. B. Higginbottom +4

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon pr…