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20192021
most citedT centres in photonic silicon-on-insulator material

1 citations · 1 across the 2 of their papers we have counts for

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quant-ph2021

Optical observation of single spins in silicon

A. T. K. Kurkjian, D. B. Higginbottom, C. Chartrand +18

The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter i…

quant-ph20211 cited

T centres in photonic silicon-on-insulator material

E. R. MacQuarrie, C. Chartrand, D. B. Higginbottom +4

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon pr…

quant-ph2020

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

E. R. MacQuarrie, Samuel F. Neyens, J. P. Dodson +8

Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-q…

quant-ph2019

Auto-tuning of double dot devices in situ with machine learning

Justyna P. Zwolak, Thomas McJunkin, Sandesh S. Kalantre +7

The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applicatio…

quant-ph2019

Measurements of capacitive coupling within a quadruple quantum dot array

Samuel F. Neyens, E. R. MacQuarrie, J. P. Dodson +9

We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regi…