Direct measurement of spin-flip rates in single-electron tunneling

Abstract

Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such devices, different Landé factors lead to an inhomogeneous Zeeman splitting, so that the two spin channels can never be at resonance simultaneously, leading to a spin blockade at low temperatures. This blockade is analyzed in terms of spin flips for different temperatures and magnetic fields. Our results are in good agreement with a quantum master equation that combines the dot-lead couplings with ohmic dissipation stemming from spin-flip cotunneling.

arXiv comment9 pages, 8 figures

References in corpus (35)

• Quantum Computation with Quantum Dots
• Quantum state engineering with Josephson-junction devices
• Single-shot read-out of an individual electron spin in a quantum dot
• Semiconductor Spin Qubits
• Spin-orbit qubit in a semiconductor nanowire
• Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
• Hyperfine interaction in a quantum dot: Non-Markovian electron spin dynamics
• Zeeman energy and spin relaxation in a one-electron quantum dot
• Electrical control of spin relaxation in a quantum dot
• Spin-echo of a single electron spin in a quantum dot
• Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots
• Tunable effective g-factor in InAs nanowire quantum dots
• Universal logic with encoded spin qubits in silicon
• Pauli Spin Blockade in the Presence of Strong Spin-Orbit Coupling
• Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
• Spin decay and quantum parallelism
• Noise enhancement due to quantum coherence in coupled quantum dots
• Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
• Exponential decay in a spin bath
• Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
• Spin relaxation in a single-electron graphene quantum dot
• On-demand electrical control of spin qubits
• Optical detection of single electron transport dynamics
• Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
• Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots
• Simultaneous Spin-Charge Relaxation in Double Quantum Dots
• Anisotropic Pauli spin blockade in hole quantum dots
• Stationary and transient leakage current in the Pauli spin blockade
• Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
• Spin orbit coupling at the level of a single electron
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Leakage-current lineshapes from inelastic cotunneling in the Pauli spin blockade regime
• Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot
• Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings
• Temperature-dependent broadening of coherent current peaks in InAs double quantum dots