64 citations · 229 across the 9 of their papers we have counts for
9 papers
Efficient self-consistent quantum transport simulator for quantum devices
Xujiao Gao, Denis Mamaluy, Erik Nielsen +6
We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulatio…
QCAD Simulation and Optimization of Semiconductor Quantum Dots
Xujiao Gao, Erik Nielsen, Richard P. Muller +5
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for q…
Triangulating tunneling resonances in a point contact
Nathaniel C. Bishop, Ralph W. Young, Gregory A. Ten Eyck +8
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device str…
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Compact Modeling of 0.35 micron SOI CMOS Technology Node for 4 K DC Operation using Verilog-A
A. Akturk, K. Eng, J. Hamlet +7
Compact modeling of MOSFETs from a 0.35 micron SOI technology node operating at 4 K is presented. The Verilog-A language is used to modify device equations for BSIM models and more…
Capacitance modeling of complex topographical silicon quantum dot structures
H. L. Stalford, R. Young, E. P. Nordberg +3
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitanc…