113 citations · 250 across the 5 of their papers we have counts for
5 papers
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
R. M. Jock, S. Shankar, A. M. Tyryshkin +7
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
E. P. Nordberg, H. L. Stalford, R. Young +10
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work…
Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford +11
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. S…
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
L. A. Tracy, E. H. Hwang, K. Eng +6
By analyzing the temperature () and density () dependence of the measured conductivity () of 2D electrons in the low density (cm) and temperature (0.02…