113 citations · 233 across the 5 of their papers we have counts for
5 papers
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Capacitance modeling of complex topographical silicon quantum dot structures
H. L. Stalford, R. Young, E. P. Nordberg +3
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitanc…
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
E. P. Nordberg, H. L. Stalford, R. Young +10
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work…
Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford +11
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. S…
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
L. A. Tracy, E. H. Hwang, K. Eng +6
By analyzing the temperature () and density () dependence of the measured conductivity () of 2D electrons in the low density (cm) and temperature (0.02…