262 citations · 766 across the 11 of their papers we have counts for
11 papers
Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
C. B. Simmons, Teck Seng Koh, Nakul Shaji +12
We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states t…
Single-electron quantum dot in Si/SiGe with integrated charge-sensing
C. B. Simmons, Madhu Thalakulam, Nakul Shaji +7
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si…
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Nakul Shaji, C. B. Simmons, Madhu Thalakulam +11
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current thr…
Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
Levente J. Klein, Donald E. Savage, Mark A. Eriksson
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in…
Controllable valley splitting in silicon quantum devices
Srijit Goswami, K. A. Slinker, Mark Friesen +10
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple va…
Elastically Relaxed Free-standing Strained-Si Nanomembranes
Michelle M. Roberts, Levente J. Klein, Don E. Savage +5
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In…