activity
20042010
most citedElastically Relaxed Free-standing Strained-Si Nanomembranes

262 citations · 766 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2010★ 26 cited

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

C. B. Simmons, Teck Seng Koh, Nakul Shaji +12

We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states t…

cond-mat.mes-hall2007★ 80 cited

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

C. B. Simmons, Madhu Thalakulam, Nakul Shaji +7

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si…

cond-mat.mes-hall2007★ 2 cited

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Nakul Shaji, C. B. Simmons, Madhu Thalakulam +11

Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current thr…

cond-mat.mes-hall2006★ 37 cited

Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

Levente J. Klein, Donald E. Savage, Mark A. Eriksson

Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in…

cond-mat.mes-hall2006★ 255 cited

Controllable valley splitting in silicon quantum devices

Srijit Goswami, K. A. Slinker, Mark Friesen +10

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple va…

cond-mat.mes-hall2006★ 262 cited

Elastically Relaxed Free-standing Strained-Si Nanomembranes

Michelle M. Roberts, Levente J. Klein, Don E. Savage +5

Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In…