activity
20052017
most citedSingle-electron quantum dot in Si/SiGe with integrated charge-sensing

80 citations · 257 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2017★ 58 cited

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

Hua Qin, Xiang Li, Jiandong Sun +5

The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close…

cond-mat.mes-hall2017

High-efficiency spontaneous terahertz emission from electrically-excited plasmons in AlGaN/GaN two-dimensional electron gas

Hua Qin, Yao Yu, Jiandong Sun +16

The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. P…

cond-mat.mes-hall2012★ 48 cited

Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector

J. D. Sun, H. Qin, R. A. Lewis +5

In a GaN/AlGaN field-effect terahertz detector, the directional photocurrent is mapped in the two-dimensional space of the gate voltage and the drain/source bias. It is found that…

cond-mat.mes-hall2010★ 26 cited

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

C. B. Simmons, Teck Seng Koh, Nakul Shaji +12

We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states t…

cond-mat.mes-hall2007★ 80 cited

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

C. B. Simmons, Madhu Thalakulam, Nakul Shaji +7

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si…

cond-mat.mes-hall2007★ 15 cited

Direct mechanical mixing in a nanoelectromechanical diode

Hyun S. Kim, Hua Qin, Robert H. Blick

We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10-1000 MHz. The device is m…