51 citations · 51 across the 2 of their papers we have counts for
3 papers
cond-mat.other2008★ 51 cited
Single-atom doping for quantum device development in diamond and silicon
C. D. Weis, A. Schuh, A. Batra +10
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fl…
cond-mat.other2007
Detection of low energy single ion impacts in micron scale transistors at room temperature
A. Batra, C. D. Weis, J. Reijonen +5
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures ar…
cond-mat.mtrl-sci2005
Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
T. Schenkel, A. M. Tyryshkin, R. de Sousa +7
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after ra…