77 citations · 403 across the 37 of their papers we have counts for
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cond-mat.other2008★ 12 cited
Mapping of ion beam induced current changes in FinFETs
C. D. Weis, A. Schuh, A. Batra +8
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20…
cond-mat.other2008★ 51 cited
Single-atom doping for quantum device development in diamond and silicon
C. D. Weis, A. Schuh, A. Batra +10
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fl…
cond-mat.other2007
Detection of low energy single ion impacts in micron scale transistors at room temperature
A. Batra, C. D. Weis, J. Reijonen +5
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures ar…