77 citations · 403 across the 37 of their papers we have counts for
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Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
Vsevolod Ivanov, Jacopo Simoni, Yeonghun Lee +10
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers…
Defect engineering of silicon with ion pulses from laser acceleration
Walid Redjem, Ariel J. Amsellem, Frances I. Allen +27
Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals wit…
Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions
Russell E. Lake, Arun Persaud, Casey Christian +6
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal…
Accessing defect dynamics using intense, nanosecond pulsed ion beams
A. Persaud, J. J. Barnard, H. Guo +5
Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical mod…
Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
T. Schenkel, A. M. Tyryshkin, R. de Sousa +7
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after ra…