activity
19972012
most citedDzyaloshinsky-Moriya Anisotropy in the Spin-1/2 Kagomé Compound ZnCu(OH)Cl

226 citations · 673 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.other2012

Free-Electron Laser-Powered Electron Paramagnetic Resonance Spectroscopy

S. Takahashi, L. -C. Brunel, D. T. Edwards +4

Electron paramagnetic resonance (EPR) spectroscopy interrogates unpaired electron spins in solids and liquids to reveal local structure and dynamics; for example, EPR has elucidate…

cond-mat.mes-hall2008★ 102 cited

Coherent Manipulation and Decoherence of S=10 Single-Molecule Magnets

Susumu Takahashi, Johan van Tol, Christopher C. Beedle +3

We report coherent manipulation of S=10 Fe single-molecule magnets. The temperature dependence of the spin decoherence time measured by high frequency pulsed electron p…

quant-ph2008★ 61 cited

Long spin coherence in silicon with an electrical spin trap readout

G. W. Morley, D. R. McCamey, H. A. Seipel +3

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presen…

cond-mat.str-el2008★ 226 cited

Dzyaloshinsky-Moriya Anisotropy in the Spin-1/2 Kagomé Compound ZnCu(OH)Cl

A. Zorko, S. Nellutla, J. van Tol +7

We report the determination of the Dzyaloshinsky-Moriya interaction, the dominant magnetic anisotropy term in the \kagome spin-1/2 compound {\herbert}. Based on the analysis of the…

quant-ph2008★ 92 cited

A multi-frequency high-field pulsed EPR / ENDOR spectrometer

Gavin W. Morley, Louis-Claude Brunel, Johan van Tol

We describe a pulsed multi-frequency electron paramagnetic resonance spectrometer operating at several frequencies in the range of 110-336 GHz. The microwave source at all frequenc…

cond-mat.other2008★ 29 cited

Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

D. R. McCamey, G. W. Morley, H. A. Seipel +3

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline sil…