Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
arXiv:2011.14792 · doi:10.1103/PhysRevApplied.15.044014
Abstract
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 10. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.
arXiv comment6 figures
References in corpus (13)
- An addressable quantum dot qubit with fault-tolerant control fidelity
- A Two Qubit Logic Gate in Silicon
- Single-shot readout of an electron spin in silicon
- Storing quantum information for 30 seconds in a nanoelectronic device
- Strong spin-photon coupling in silicon
- Isolating and enhancing the emission of single erbium ions using a silicon nanophotonic cavity
- Long-Range Microwave Mediated Interactions Between Electron Spins
- Single-photon emitting diode in silicon carbide
- Optical addressing of an individual erbium ion in silicon
- Single-shot single-gate RF spin readout in silicon
- Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
- Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies
- Low temperature properties of whispering gallery modes in isotopically pure silicon 28