Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

Abstract

There has been growing interest in studying hexagonal boron nitride (hBN) for quantum technologies. Here, we investigate nitrogen isotope effects on boron vacancy (V${}_{\text{B}}$) defects, one of the candidates for quantum sensors, in ${}^{15}$N isotopically enriched hBN synthesized using a metathesis reaction. The Raman shifts are scaled with the reduced mass, consistent with previous work on boron isotope enrichment. We obtain nitrogen isotopic composition-dependent magnetic resonance spectra of V${}_{\text{B}}$ defects and determine the magnitude of the hyperfine interaction parameter of ${}^{15}$N spin to be 64 MHz. Our investigation provides a design policy for hBNs for quantum sensing.

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Cited by in corpus (6)

• Probing Stress and Magnetism at High Pressures with Two-Dimensional Quantum Sensors
• Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride
• Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis
• Systematic characterization of nanoscale $h$-BN quantum sensor spots created by helium-ion microscopy
• Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
• Robust gigahertz-range ac magnetometry with an ensemble of NV centers in diamond using concatenated continuous dynamical decoupling