Magnetic field imaging by hBN quantum sensor nanoarray
arXiv:2301.12645 · doi:10.1063/5.0147072
Abstract
Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate high-spatial-resolution magnetic field imaging with a boron vacancy (V) defects array in hexagonal boron nitride with a few 10 nm thickness. V sensor spots with a size of (100 nm) are arranged periodically with nanoscale precision using a helium ion microscope and attached tightly to a gold wire. The sensor array allows us to visualize the magnetic field induced by the current in the wire with a spatial resolution beyond the diffraction limit. Each sensor exhibits a practical sensitivity of , suitable for quantum materials research. Our technique of arranging V quantum sensors periodically and tightly on measurement targets will maximize their potential.
6 pages, 4 figures
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Cited by in corpus (9)
- Quantum sensing and imaging with spin defects in hexagonal boron nitride
- Quantum Optics Applications of Hexagonal Boron Nitride Defects
- Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
- Photonics in Flatland: Challenges and Opportunities for Nanophotonics with 2D Semiconductors
- Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride
- Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride
- Systematic characterization of nanoscale -BN quantum sensor spots created by helium-ion microscopy
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