389 citations · 1.2k across the 17 of their papers we have counts for
18 papers
Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
Yuki Nakamura, Takuya Iwasaki, Shu Nakaharai +6
Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is importan…
Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
Yuki Nakamura, Shunsuke Nishimura, Takuya Iwasaki +7
Dynamic nuclear polarization (DNP) using the boron vacancy () in hexagonal boron nitride (hBN) has gained increasing attention. Understanding this DNP requires syst…
Systematic characterization of nanoscale -BN quantum sensor spots created by helium-ion microscopy
Hao Gu, Moeta Tsukamoto, Yuki Nakamura +8
The nanosized boron vacancy () defect spot in hexagonal boron nitride (-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that…
Magnetic field imaging by hBN quantum sensor nanoarray
Kento Sasaki, Yuki Nakamura, Hao Gu +8
Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate high-spatial-resolution magnetic field imaging with a boron vacancy…
Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields
Takuya Iwasaki, Motoi Kimata, Yoshifumi Morita +7
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hB…
ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory
Bablu Mukherjee, Ryoma Hayakawa, Kenji Watanabe +3
We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic…