133 citations · 656 across the 17 of their papers we have counts for
18 papers
Benchmarking exchange-only control of a 48-spin singlet manifold
HRL Quantum Team, Microsoft Collaborators, : +125
Exchange-only quantum computing benefits from high fidelity and straightforward control afforded by the exchange interaction. However, independently controllable qubits must be enc…
A digitally controlled silicon quantum processing unit
Members of the HRL Quantum Team, Collaborators, : +255
Commercially-relevant quantum computers will require large numbers of high-performing qubits that can be manufactured, integrated, and controlled at scale. Silicon exchange-only (E…
Full-permutation dynamical decoupling in triple-quantum-dot spin qubits
Bo Sun, Teresa Brecht, Bryan Fong +20
Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical dec…
High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit
A. R. Mills, C. R. Guinn, M. M. Feldman +6
Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon sp…
Universal logic with encoded spin qubits in silicon
Aaron J. Weinstein, Matthew D. Reed, Aaron M. Jones +20
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this…
Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
Jacob Z. Blumoff, Andrew S. Pan, Tyler E. Keating +19
We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ( ns) and initialization…
Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
F. Borjans, X. Zhang, X. Mi +5
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, whi…
Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Edward H. Chen, Kate Raach, Andrew Pan +16
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximiz…
Magnetic Gradient Fluctuations from Quadrupolar Ge in Si/SiGe Exchange-Only Qubits
J. Kerckhoff, B. Sun, B. H. Fong +14
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral…
Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics
F. Borjans, X. Croot, S. Putz +12
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allo…
Dichotomy of the transport coefficients of correlated electron liquids in SrTiO3
Tyler A. Cain, Evgeny Mikheev, Clayton A. Jackson +1
We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature…
Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO embedded in GdTiO
S. Nemšák, G. Conti, G. K. Pálsson +15
For certain conditions of layer thickness, the interface between GdTiO (GTO) and SrTiO (STO) in multilayer samples has been found to form a two-dimensional electron gas (2D…
Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
S. Nemšák, G. Conti, A. X. Gray +32
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense st…
Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO3 quantum wells
Jack Y. Zhang, Clayton A. Jackson, Ru Chen +4
The electrical and structural characteristics of SmTiO3/SrTiO3/SmTiO3 and GdTiO3/SrTiO3/GdTiO3 heterostructures are compared. Both types of structures contain narrow SrTiO3 quantum…
Interface-induced magnetism in perovskite quantum wells
Clayton A. Jackson, Susanne Stemmer
We investigate the angular dependence of the magnetoresistance of thin (< 1 nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating, ferrimagnetic GdTiO3 and insulati…
Magnetism and local structure in low-dimensional, Mott insulating GdTiO3
Jack Y. Zhang, Clayton A. Jackson, Santosh Raghavan +2
Cation displacements, oxygen octahedral tilts, and magnetism of epitaxial, ferrimagnetic, insulating GdTiO3 films sandwiched between cubic SrTiO3 layers are studied using scanning…
Toward an artificial Mott insulator: Correlations in confined, high-density electron liquids in SrTiO3
Pouya Moetakef, Clayton A. Jackson, Jinwoo Hwang +3
We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfa…
Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface
Tyler A. Cain, Pouya Moetakef, Clayton A. Jackson +1
A modulation-doping approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carri…