19 citations · 35 across the 4 of their papers we have counts for
6 papers
Electrons and holes in Si quantum well: a room-temperature transport and drag resistance study
M. Prunnila, S. J. Laakso, J. M. Kivioja +1
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and H…
Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells
M. Prunnila, J. M. Kivioja, J. Ahopelto
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly w…
Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor
J. M. Kivioja, M. Prunnila, S. Novikov +2
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-te…
Electron-Acoustic Phonon Energy Loss Rate in Multi-Component Electron Systems with Symmetric and Asymmetric Coupling Constants
Mika Prunnila
We consider electron-phonon (\textit{e-ph}) energy loss rate in 3D and 2D multi-component electron systems in semiconductors. We allow general asymmetry in the \textit{e-ph} coupli…
Two sub-band conductivity of Si quantum well
Mika Prunnila, Jouni Ahopelto
We report on two sub-band transport in double gate SiO-Si-SiO quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacin…
Electron Mobility and Magneto Transport Study of Ultra-Thin Channel Double-Gate Si MOSFETs
M. Prunnila, J. Ahopelto, F. Gamiz
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricat…