120 citations · 1.2k across the 44 of their papers we have counts for
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Conformal Titanium Nitride in a Porous Silicon Matrix: a Nanomaterial for In-Chip Supercapacitors
Kestutis Grigoras, Jari Keskinen, Leif Grönberg +6
Today's supercapacitor energy storages are typically discrete devices aimed for printed boards and power applications. The development of autonomous sensor networks and wearable el…
Determination of Doping and Temperature Dependent Elastic Constants of Degenerately Doped Silicon from MEMS Resonators
Antti Jaakkola, Mika Prunnila, Tuomas Pensala +2
Elastic constants c11, c12 and c44 of degenerately doped silicon are studied experimentally as a function of the doping level and temperature. First and second order temperature co…
Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters
Aapo Varpula, Mika Prunnila
Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, an…
Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry
M. Prunnila, M. Meschke, D. Gunnarsson +3
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area.…
Electrons and holes in Si quantum well: a room-temperature transport and drag resistance study
M. Prunnila, S. J. Laakso, J. M. Kivioja +1
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and H…
Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor
J. M. Kivioja, M. Prunnila, S. Novikov +2
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-te…
Electron Mobility and Magneto Transport Study of Ultra-Thin Channel Double-Gate Si MOSFETs
M. Prunnila, J. Ahopelto, F. Gamiz
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricat…