most citedPassivation and characterization of charge defects in ambipolar silicon quantum dots

24 citations · 24 across the 2 of their papers we have counts for

collaborators

5 papers

quant-ph2026

Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects

Andrii Sokolov, Conor Power, Mathieu Moras +7

Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) mod…

cond-mat.mes-hall2017

A fabrication guide for planar silicon quantum dot heterostructures

Paul C. Spruijtenburg, Sergey V. Amitonov, Wilfred G. van der Wiel +1

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrins…

cond-mat.mes-hall2017

Palladium gates for reproducible quantum dots in silicon

Matthias Brauns, Sergey V. Amitonov, Paul-Christiaan Spruijtenburg +1

We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gate…

cond-mat.mes-hall2017

Depletion-mode Quantum Dots in Intrinsic Silicon

Sergey V. Amitonov, Paul C. Spruijtenburg, Max W. S. Vervoort +2

We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO…

cond-mat.mes-hall2017★ 24 cited

Passivation and characterization of charge defects in ambipolar silicon quantum dots

P. C. Spruijtenburg, S. V. Amitonov, F. Mueller +2

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects…