activity
20032016
most citedValley splitting in strained silicon quantum wells

161 citations · 614 across the 17 of their papers we have counts for

collaborators

17 papers

cond-mat.mtrl-sci2016★ 66 cited

Transferable tight binding model for strained group IV and III-V materials and heterostructures

Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +2

It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with neares…

cond-mat.mtrl-sci2015★ 1 cited

Transferable tight binding model for strained group IV and III-V heterostructures

Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis +2

In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding p…

cond-mat.mtrl-sci2015★ 77 cited

Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution

Yaohua P. Tan, Michael Povolotsky, Tillmann Kubis +2

Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments o…

cond-mat.mes-hall2014★ 25 cited

Brillouin zone unfolding method for effective phonon spectra

Timothy B. Boykin, Arvind Ajoy, Hesameddin Ilatikhameneh +2

Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure materi…

cond-mat.mtrl-sci2013★ 14 cited

An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures I - Model and Validation

Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis +2

Semi-Empirical Tight Binding (TB) is known to be a scalable and accurate atomistic representation for electron transport for realistically extended nano-scaled semiconductor device…

cond-mat.mtrl-sci2013★ 28 cited

Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces

Xueping Jiang, Neerav Kharche, Paul Kohl +5

In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy o…