Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier
arXiv:cond-mat/0512414 · doi:10.1088/0953-8984/18/5/005
Abstract
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays on a distance of the order of 50 - 100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.
15 pages, 5 figures, accepted for publication in J. Phys.: Condens. Matter