Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

Abstract

We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin-orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays on a distance of the order of 50 - 100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.

15 pages, 5 figures, accepted for publication in J. Phys.: Condens. Matter

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• L-valley Electron Spin Dynamics in GaAs
• Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells
• Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
• $L$-valley electron $g$ factor in bulk GaAs and AlAs
• Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise
• New insights into electron spin dynamics in the presence of correlated noise
• Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices
• Electrical expression of spin accumulation in ferromagnet/semiconductor structures