$L$-valley electron $g$ factor in bulk GaAs and AlAs

Abstract

We study the Landé $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot \mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly anisotropic, and can be characterized by two components, $g_{\perp }$ and $g_{\Vert }$. $g_{\perp }$ is close to the free electron Landé factor but $g_{\Vert }$ is strongly affected by the remote bands. The contribution from remote bands on $g_{\Vert }$ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical $g$-factor.

4 pages, 1 figure, To be published in J. App. Phys. 104, 2008

References in corpus (5)

• Spintronics: Fundamentals and applications
• Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier
• Spin and cyclotron energies of electrons in GaAs/Ga${}_{1-x}$Al${}_x$As quantum wells
• Spin-orbit coupling in bulk GaAs
• Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells

Cited by in corpus (2)

• Spin dynamics in semiconductors
• Spin-orbit coupling and $g$-factor of $X$-valley in cubic GaN