Spin-orbit coupling and $g$-factor of $X$-valley in cubic GaN

Abstract

We report our theoretically investigation on the spin-orbit coupling and $g$-factor of the $X$-valley in cubic GaN. We find that the spin-orbit coupling coefficient from $s{p}^3{d}^5{s}^{\ast }$ tight-binding model is 0.029\,eV$\cdot$Å, which is comparable with that in cubic GaAs. By employing the $\mathbf{k}\cdot \mathbf{p}$ theory, we find that the $g$-factor in this case is only slightly different from the free electron $g$-factor. These results are expected to be important for the on-going study on spin dynamics far away from equilibrium in cubic GaN.

3 pages, 1 figure

References in corpus (7)

• Spin dynamics in semiconductors
• Spin orbit coupling in bulk ZnO and GaN
• Spin-orbit coupling in bulk GaAs
• Reexamination of spin decoherence in semiconductor quantum dots from equation-of-motion approach
• Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells
• Electron spin relaxation in cubic GaN quantum dots
• $L$-valley electron $g$ factor in bulk GaAs and AlAs