Nonlinear response in overlapping and separated Landau levels of GaAs quantum wells

Abstract

We have studied magnetotransport properties of a high-mobility two-dimensional electron system subject to weak electric fields. At low magnetic field $B$, the differential resistivity acquires a correction $\delta r\propto -{\lambda }^2{j}^2/B^2$, where $\lambda$ is the Dingle factor and $j$ is the current density, in agreement with theoretical predictions. At higher magnetic fields, however, $\delta r$ becomes $B$-independent, $\delta r\propto -j^2$. While the observed change in behavior can be attributed to a crossover from overlapping to separated Landau levels, full understanding of this behavior remains a subject of future theories.

5 pages, 5 figures

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• Hall field-induced resistance oscillations in Ge/SiGe quantum wells
• Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures
• Microwave Photoresistance in an Ultrahigh Quality GaAs Quantum Well
• Multiphoton processes at cyclotron resonance subharmonics in a 2D electron system under DC and microwave excitation
• Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias
• Bloch-Grüneisen nonlinearity of electron transport in GaAs/AlGaAs heterostructures
• Oscillatory photoresistance on the high field side of the cyclotron resonance