Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Abstract

We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin-splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin relaxation time shows several peaks with increasing the Fermi wavevector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

11 pages, 9 figures

References in corpus (11)

• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Emergence of the persistent spin helix in semiconductor quantum wells
• Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
• Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
• Spin Orientation and Spin Precession in Inversion-Asymmetric Quasi Two-Dimensional Electron Systems
• Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells
• Excitonic instability and electric-field-induced phase transition towards a two dimensional exciton condensate
• Optical transitions in broken gap heterostructures
• Spin Polarization of Quasi Two-Dimensional Hole Systems
• Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells

Cited by in corpus (16)

• Edge Channel Transport in InAs/GaSb Topological Insulating Phase
• Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells
• Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells
• Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
• Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
• Hidden edge Dirac point and robust quantum edge transport in InAs/GaSb quantum wells
• Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors
• Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well
• Enhanced circular photogalvanic effect in HgTe quantum wells in the heavily inverted regime
• Direct detection of the relative strength of Rashba and Dresselhaus spin-orbit interaction: Utilizing the SU(2) symmetry
• Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells
• D'yakonov-Perel' spin relaxation in InSb/AlInSb quantum wells
• Asymmetric versus symmetric $HgTe/C{\mathrm{d}}_{\mathrm{x}}\mathrm{H}{\mathrm{g}}_{1-\mathrm{x}}\mathrm{Te}$ double quantum wells: Band gap tuning without electric field
• Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
• Electrical tuning of helical edge states in topological multilayers
• Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer