Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
arXiv:1610.05784 · doi:10.1103/PhysRevB.95.045116
Abstract
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor to semimetal transition can be realized by manipulating the quantum confinement, the strain, and the magnetic field. Our work paves the way for band engineering of optimal InAs/GaSb structures for realizing novel topological states as well as for device applications in the terahertz regime.
arXiv comment15 pages, 9 figures
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Cited by in corpus (12)
- Unraveling the Topological Phase of ZrTe via Magneto-infrared Spectroscopy
- Energy gap tuning and gate-controlled topological phase transition in InAs/InGaSb composite quantum wells
- Giant -factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
- Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy
- Revealing temperature evolution of the Dirac band in ZrTe via magneto-infrared spectroscopy
- -factor engineering with InAsSb alloys toward zero band gap limit
- Landau quantization in tilted Weyl semimetals with broken symmetry
- Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
- Electrical tuning of helical edge states in topological multilayers
- Magneto-optical evidence of tilting effect in coupled Weyl bands
- Antiparticle of exciton in semimetals
- Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer