28 citations · 58 across the 9 of their papers we have counts for
9 papers
Optical characterization of deep level defects in n-type AlInGaP for development of solid-state photomultiplier analogs
Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6
Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…
Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Wei Pan, D. Bruce Burckel, Catalin D. Spataru +16
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one espe…
Buried Dirac points in quantum spin Hall insulators: Implications for Majorana Kramers pair-based quantum computing
Joseph J. Cuozzo, Wenlong Yu, Xiaoyan Shi +5
For heterostructures formed by a quantum spin Hall insulator (QSHI) placed in proximity to a superconductor (SC), no external magnetic field is necessary to drive the system into a…
Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx
Henan Liu, Yong Zhang, Elizabeth H. Steenbergen +10
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by eith…
Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer
W. Yu, V. Clericò, C. Hernández Fuentevilla +16
Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound s…
Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
Y. Jiang, S. Thapa, G. D. Sanders +10
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that…
Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure
G. C. Dyer, X. Shi, B. V. Olson +4
Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically…
Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction
Xiaoyan Shi, Wenlong Yu, Zhigang Jiang +4
Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fer…
Superconducting proximity effect in inverted InAs/GaSb quantum well structures with Ta electrodes
Wenlong Yu, Yuxuan Jiang, Chao Huan +5
We present our recent electronic transport results in top-gated InAs/GaSb quantum well hybrid structures with superconducting Ta electrodes. We show that the transport across the I…