Giant -factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
arXiv:2201.01938 · doi:10.1038/s41467-022-33560-x
Abstract
Realizing a large Landé -factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of , twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the -factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward -factor engineering in semiconductor structures.
References in corpus (20)
- Spintronics: Fundamentals and applications
- Realizing Majorana zero modes in superconductor-semiconductor heterostructures
- Model Hamiltonian for Topological Insulators
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Single valley Dirac fermions in zero-gap HgTe quantum wells
- Electron g-factor Engineering in III-V Semiconductors for Quantum Communications
- Topological Phases in InAsSb: From Novel Topological Semimetal to Majorana Wire
- InSbAs two-dimensional electron gases as a platform for topological superconductivity
- Electronic States and Cyclotron Resonance in n-type InMnAs
- Backscattering of Dirac fermions in HgTe quantum wells with a finite gap
- Landau level spectroscopy of massive Dirac fermions in single-crystalline ZrTe5 thin flakes
- Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact
- Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
- Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
- Effective g-factors of carriers in inverted InAs/GaSb bilayers
- Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy
- Valley and Zeeman Splittings in Multilayer Epitaxial Graphene Revealed by Circular Polarization Resolved Magneto-infrared Spectroscopy
- Dirac energy spectrum and inverted band gap in metamorphic InAsSb/InSb superlattices
- In-plane spectrum in superlattices
- Electron g-factor engineering for non-reciprocal spin photonics