Bulk transport through superconducting hybrid structures in HgTe quantum wells
arXiv:1403.3337 · doi:10.1103/PhysRevB.90.165442
Abstract
We investigate the subgap bulk transport through short and wide superconducting hybrid structures based on HgTe quantum wells (QWs). We show that the differential conductance of a normal metal-insulator-superconductor (NIS) proximity structure behaves in a qualitatively different way with respect to the topological phase of the HgTe QW. We compare the differential conductance for the NIS structure within the wave-matching method based on the Bogoliubov-de Gennes equation and the matrix method based on the normal-state scattering matrix and find that the two models agree for highly-doped N and S contacts. We also show that the effect of a possible Rashba spin-orbit interaction on the differential conductance can be significant for weakly doped N and S contacts. Our findings should be important in samples with a large aspect ratio where bulk contributions in transport are dominant.
10 pages, 7 figures
References in corpus (12)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Non-Abelian Anyons and Topological Quantum Computation
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
- Nonlocal edge state transport in the quantum spin Hall state
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Non-Abelian quantum order in spin-orbit-coupled semiconductors: The search for topological Majorana particles in solid state systems
- Induced Superconductivity in the Quantum Spin Hall Edge
- Single valley Dirac fermions in zero-gap HgTe quantum wells
- Charge transport in two dimensional electron gas/superconductor junctions with Rashba spin-orbit coupling
- Disorder and magnetic-field induced breakdown of helical edge conduction in an inverted electron-hole bilayer