activity
19982004
most citedEnhanced shot noise in resonant tunnelling via interacting localised states

118 citations · 251 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2004★ 8 cited

Shot Noise in Mesoscopic Transport Through Localised States

A. K. Savchenko, S. S. Safonov, S. H. Roshko +5

We show that shot noise can be used for studies of hopping and resonant tunnelling between localised electron states. In hopping via several states, shot noise is seen to be suppre…

cond-mat.mes-hall2004

Interactions in high-mobility 2D electron and hole systems

E. A. Galaktionov, A. K. Savchenko, S. S. Safonov +7

Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter changes fr…

cond-mat.mes-hall2003★ 118 cited

Enhanced shot noise in resonant tunnelling via interacting localised states

S. S. Safonov, A. K. Savchenko, D. A. Bagrets +4

In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the…

cond-mat.mes-hall2001★ 86 cited

Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime

Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov +3

On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\h…

cond-mat.mes-hall2001★ 34 cited

Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s

Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov +3

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, a…

cond-mat.mes-hall2000

Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs

S. S. Safonov, S. H. Roshko, A. K. Savchenko +2

The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulat…