The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems
arXiv:0804.4049 · doi:10.1103/PhysRevB.77.201402
Abstract
We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground-plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cool-down, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground-plane.
5 pages, 4 figures, accepted for publication in PRB
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- The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
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