On the temperature dependence of 2D "metallic" conductivity in Si inversion layers at intermediate temperatures

Abstract

We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at intermediate temperatures'' is incorrect and misleading. In particular, the temperature dependent conductivity $\sigma$, in contrast to the resistivity (which is what is shown in the paper), does not have a linear temperature regime, rendering the extraction of the slope $d\sigma /dT$ completely arbitrary. We also show that, at least for higher densities, the standard semiclassical transport theory, which includes realistic disorder effects such as scattering by {\it screened} charged impurity and surface roughness, gives essentially quantitative agreement with the experimental data.

arXiv commentComment on Pudalov {\it et al}. Phys. Rev. Lett. {\bf 91}, 126403 (2003)

References in corpus (5)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers
• Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures
• Metallicity and its low temperature behavior in dilute 2D carrier systems

Cited by in corpus (4)

• Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems
• The so-called two dimensional metal-insulator transition
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
• Temperature dependent weak field Hall resistance in 2D carrier systems