Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

Abstract

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g-factor that is close to its value in bulk silicon and does not depend on filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.

References in corpus (1)

• Spin-independent origin of the strongly enhanced effective mass in a dilute 2D electron system

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• Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems