36 citations · 170 across the 8 of their papers we have counts for
8 papers · 1 filter
Filling factor dependence of the fractional quantum Hall effect gap
V. S. Khrapai, A. A. Shashkin, M. G. Trokina +5
We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) ele…
Direct measurements of the fractional quantum Hall effect gaps
V. S. Khrapai, A. A. Shashkin, M. G. Trokina +5
We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the f…
Magnetization of a strongly interacting two-dimensional electron system in perpendicular magnetic fields
S. Anissimova, A. Venkatesan, A. A. Shashkin +3
We measure the thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon in perpendicular magnetic fields. A new, parameter-fr…
Spin gap in the 2D electron system of GaAs/AlGaAs single heterojunctions in weak magnetic fields
V. S. Khrapai, A. A. Shashkin, E. L. Shangina +4
We study the interaction-enhanced spin gaps in the two-dimensional electron gas confined in GaAs/AlGaAs single heterojunctions subjected to weak magnetic fields. The values are obt…
Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"
A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko
We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid.
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin +4
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the rem…