177 citations · 1.7k across the 62 of their papers we have counts for
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cond-mat.mes-hall2002★ 26 cited
On Effective Electron Mass of Silicon MOSFET at Low Electron Density
V. T. Dolgopolov
The trial wave function method developed in Ref.s \cite{gutz,brink} for the case of narrow {\it s}-band in a perfect crystal is adapted for calculation of the density dependence of…
cond-mat.mes-hall2002★ 19 cited
Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers
V. T. Dolgopolov, A. Gold
Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers
cond-mat2002★ 55 cited
Strong enhancement of the valley splitting in a 2D electron system in silicon
V. S. Khrapai, A. A. Shashkin, V. T. Dolgopolov
Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley…