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Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"
A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko
We show that the comparison between theory and experiment, performed by Pudalov et al. in PRL 91, 126403 (2003), is not valid.
On the temperature dependence of 2D "metallic" conductivity in Si inversion layers at intermediate temperatures
S. Das Sarma, E. H. Hwang
We show that the recent experimental claim [Pudalov {\it et al}. \prl {\bf 91}, 126403 (2003) ] of observing ``interaction effects in the conductivity of Si inversion layers at int…
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin +4
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the rem…
Observation of two relaxation mechanisms in transport between spin split edge states at high imbalance
E. V. Deviatov, A. Wurtz, A. Lorke +4
Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxat…
Sharply increasing effective mass: a precursor of the spontaneous spin polarization in a dilute two-dimensional electron system
A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov +1
We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of t…
Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon
V. S. Khrapai, A. A. Shashkin, V. T. Dolgopolov
Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when…